Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT

In this paper, The x Al 1-x As graded buffer was inserted between the InAlAs layer and pseudomorphic 0.66 Ga 0.34 channel to improve material quality in channel. results show that with 50 nm thickness can obtain a good heterojunction interface root mean square (RMS) of 0.154 nm. two dimensional electron gas (2-deg) mobility concentration were 8570 cm 2 /Vs. 2.7 −2 × 10 12 at 300K, respectively. enhance electrical performance through releasing strain caused by 0.52 0.48 As/In HEMT. This study shows great potentials incorporating InP HEMT materials properties devices.